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Modeling of recombination strength at grain boundaries after phosphorus diffusion gettering and the effect of hydrogen passivation

机译：磷扩散吸杂后晶界复合强度的模拟及氢钝化效应

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Wiig, Marie Syre; Haug, Halvard; Søndenå, Rune; Marstein, Erik Stensrud;
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年度 2017
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1. Dependence of phosphorus gettering and hydrogen passivation efficacy on grain boundary type in multicrystalline silicon [J] . Karzel P., Ackermann M., Groner L., Journal of Applied Physics . 2013,第24期

机译：多晶硅中磷吸收剂和氢钝化效率对晶界类型的依赖性
2. Dependence of phosphorus gettering and hydrogen passivation efficacy on grain boundary type in multicrystalline silicon [J] . P. Karzel, M. Ackermann, L. Groener, Journal of Applied Physics . 2013,第24期

机译：多晶硅中磷吸收剂和氢钝化效率对晶界类型的依赖性
3. Impact of Phosphorous Gettering and Hydrogenation on the Surface Recombination Velocity of Grain Boundaries in p-Type Multicrystalline Silicon [J] . Sio Hang Cheong, Phang Sieu Pheng, Trupke Thorsten, Photovoltaics, IEEE Journal of . 2015,第5期

机译：磷吸气和加氢对p型多晶硅中晶界表面复合速度的影响
4. Modeling of recombination strength at grain boundaries after phosphorus diffusion gettering and the effect of hydrogen passivation [C] . Marie S. Wiig, Halvard Haug, Rune S0ndena International Conference on Silicon Photovoltaics . 2017

机译：磷扩散吸气后晶界重组强度的建模及氢钝化的影响
5. Ab Initio Modeling of Thermal Barrier Coatings: Effects of Dopants and Impurities on Interface Adhesion, Diffusion and Grain Boundary Strength. [D] . Ozfidan, Asli Isil. 2011

机译：热障涂层的从头算建模：掺杂剂和杂质对界面附着力，扩散和晶粒边界强度的影响。
6. Kinetic Modeling of Grain Boundary Diffusion: The Influence of Grain Size and Surface Processes [O] . Justina Jaseliunaite, Arvaidas Galdikas 2020

机译：晶界扩散的动力学模型：晶粒尺寸和表面过程的影响
7. The Effect of Phosphorus Diffusion Gettering on Recombination at Grain Boundaries in HPMC-Silicon Wafers [O] . Wiig Marie S., Adamczyk Krzysztof, Haug Halvard, 2016

机译：磷扩散吸收剂对HPMC-硅晶片晶粒边界复合的影响
8. The embrittling/strengthening effects of hydrogen, boron, and phosphorus on a {Sigma}5 nickel grain boundary [R] . 1999

机译：氢，硼和磷对{sigma} 5镍晶界的脆化/强化作用

Modeling of recombination strength at grain boundaries after phosphorus diffusion gettering and the effect of hydrogen passivation

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